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Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

✍ Scribed by Y. Kayser; D. Banaś; W. Cao; J.-Cl. Dousse; J. Hoszowska; P. Jagodziński; M. Kavčič; A. Kubala-Kukuś; S. Nowak; M. Pajek; J. Szlachetko


Book ID
108261765
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
299 KB
Volume
65
Category
Article
ISSN
0584-8547

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