Thin and shallow layers of some 50-150 nm were produced by ion implantation of Co ions in Si wafers and afterwards characterized by concentration-depth profiling. Two methods were applied for that purpose: a novel method combining a stepwise wet-chemical etching of an implanted wafer with total refl
✦ LIBER ✦
Analysis of the depth profile of Fe-Si buried layers in Fe+-implanted Si wafer by soft X-ray emission spectroscopy
✍ Scribed by V.R. Galakhov; E.Z. Kurmaev; S.N. Shamin; L.V. Elokhina; Yu.M. Yarmoshenko; A.A. Bukharaev
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 401 KB
- Volume
- 72
- Category
- Article
- ISSN
- 0169-4332
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