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Depth profile of disorders in silicon induced by O+ and Si+ ion bombardments

✍ Scribed by Kazuo Shin; Motoyuki Suzuki; Makoto Okazaki; Ikuji Takagi; Kouji Yoshida


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
114 KB
Volume
46
Category
Article
ISSN
0969-8043

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Bombardment of a silicon target in a high vacuum with a molecular beam (mixture of high energy H 2 +N 2 , obtained by charge exchange) and a thermal beam of O 2 produces on the target a variety of compounds. The target is then bombarded by the same molecular beams which produce, extracted by an elec