Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon
✍ Scribed by Rafí, J. M.; Zabala, M.; Beldarrain, O.; Campabadal, F.
- Book ID
- 125510533
- Publisher
- The Electrochemical Society
- Year
- 2011
- Tongue
- English
- Weight
- 851 KB
- Volume
- 158
- Category
- Article
- ISSN
- 0013-4651
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A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i
## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative high‐κ gate dielectric on hydrogen‐terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X‐ray Photoelectron Spec‐troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and