𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

✍ Scribed by Rafí, J. M.; Zabala, M.; Beldarrain, O.; Campabadal, F.


Book ID
125510533
Publisher
The Electrochemical Society
Year
2011
Tongue
English
Weight
851 KB
Volume
158
Category
Article
ISSN
0013-4651

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Properties of Al2O3-films deposited on s
✍ Per Ericsson; Stefan Bengtsson; Jarmo Skarp 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 293 KB

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i

Interface of atomic layer deposited Al2O
✍ Gao, K. Y. ;Speck, F. ;Emtsev, K. ;Seyller, Th. ;Ley, L. ;Oswald, M. ;Hansch, W. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 559 KB

## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative high‐κ gate dielectric on hydrogen‐terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X‐ray Photoelectron Spec‐troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and