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Deposition of ZnO inclinedc-axis on silicon and diamond by r.f. magnetron sputtering

✍ Scribed by Bensmaine, S. ;Le Brizoual, L. ;Elmazria, O. ;Fundenberger, J. J. ;Benyoucef, B.


Book ID
105364616
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
176 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

Suitable deposition conditions yielding to thin zinc oxide (ZnO) films with inclined c‐axis have been determined in this work. These films were deposited on silicon (100) and on the nucleation side of self‐standing diamond substrates. We used r.f. magnetron and a zinc‐oxyde target. We characterized by X‐ray diffraction (XRD) the film texture and by scanning electron microscopy (SEM) the film morphology. XRD has revealed that theses films are polycrystalline in nature having a hexagonal wurtzite crystal structure. We have measured a c‐axis angle of inclination of 45Β° in the case of ZnO/Diamond sample. (Β© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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