✦ LIBER ✦

Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter

✍ Scribed by V. I. Rudakov; A. L. Kurenya; A. A. Shornikov; M. L. Gitlin

Book ID: 110214413
Publisher: Springer
Year: 2009
Tongue: English
Weight: 387 KB
Volume: 38
Category: Article
ISSN: 1063-7397
DOI: 10.1134/s1063739709050072

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of gallium selenide films,

Investigation of gallium selenide films, grown by the hot wall method, on silicon substrates

✍ Sysoev, B. I. ;Bezryadin, N. N. ;Synorov, Yu. V. ;Agapov, B. L. 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 173 KB

Growth of In2O3thin films on silicon by

Growth of In2O3thin films on silicon by the metalorganic chemical vapor deposition method

✍ Kim, Nam Ho ;Myung, Ju Hyun ;Kim, Hyoun Woo ;Lee, Chongmu 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 167 KB

## Abstract We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 °C. The films had a preferred orie

Study of the structural perfection and d

Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

✍ G. B. Galiev; V. G. Mokerov; V. V. Saraikin; Yu. V. Slepnev; G. I. Shagimuratov; 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 232 KB