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Deposition of nanocrystalline silicon films (nc-Si:H) from a pure ECWR-SiH4 plasma

✍ Scribed by M. Scheib; B. Schröder; H. Oechsner


Book ID
115991106
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
296 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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Effects of deposition pressure on the mi
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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not