Atomic layer deposition (ALD) processes have attracted attention during the past decade as a method allowing one to obtain high-quality thin films of various materials including metal oxides, metal nitrides and pure metals. Here we investigated a novel pulse method for the deposition of ultra thin f
Deposition of highly pure ruthenium thin films with a new metal-organic precursor
β Scribed by Julien Gatineau; Christian Dussarrat
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 311 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0257-8972
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β¦ Synopsis
Ruthenium films of high purity were obtained by using a new precursor, dubbed CHORUS. This metal-organic precursor, liquid down to -50 Β°C, of low viscosity, can be fully vaporized without leaving residues at 80 Β°C. Ruthenium CVD films were obtained at temperatures of 250 Β°C and above using hydrogen as a reducing co-reactant. The CHORUS process has the characteristic of enabling deposition of pure ruthenium films without oxidizing the layer upon which the ruthenium film is grown. The obtained films show good adherence on many different types of substrates and no incubation times were observed for the depositions.
π SIMILAR VOLUMES
cm 3 in comparison to 1.8 g/cm 3 obtained for SiBCN 3 synthesized by polymer pyrolysis. High hardness values up to 22 GPa are found, which might be further increased by reducing the residual hydrogen content by applying higher bias potentials or by reduced precursor flow. ## Experimental The expe