Deposition and characterization of zinc oxide thin films for hydrogen sensor devices
โ Scribed by A. Dutta; T.K. Chaudhuri; S. Basu
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 376 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
โฆ Synopsis
Polycrystalline zinc oxide thin films with thicknesses in the range 0.3 ~m-1 #m were deposited on silicon and alumina substrates by a spray chemical vapour deposition method. The film was characterized for crystallinity, resistivity and carrier concentration. A modified heterostructure Pd/ZnO(0.38 ~m)/p-Si device was fabricated. The current-voltage characteristics of the device were studied both in the absence and in the presence of hydrogen gas.
๐ SIMILAR VOLUMES
Device-quahty ZnO thm film IS deposlted by usmg an mdlgenously developed moddied CVD method and a Pd/ZnO/p-B heteropmctlon IS fabricated A study of the current-voltage characterlstlcs of the heterolunctlon m pure air and m air with different concentrations (2000-20 000 ppm) of hydrogen reveals that
Undoped ZnO, Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were deposited on silica glass substrate at room temperature in a vacuum by KrF excimer laser (ฮป = 248 nm) pulsed laser deposition method. The transparency of ZnO thin films showed the dependence on deposition area. The relationship b