Low temperature poly-Si TFTs for display
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In-Hyuk Song; Min-Koo Han
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Article
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2003
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Elsevier Science
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English
โ 240 KB
We have fabricated new polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a single grain-boundary by a simple excimer laser annealing (ELA) method which employs a selectively floating amorphous silicon (a-Si) active layer and Al patterns. A thermally insulating air-gap between the f