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Depletion-mode TFT made of low-temperature poly-Si

โœ Scribed by Son, Y.D.; Kyung Dong Yang; Byung Seong Bae; Jang, J.; Munpyo Hong; Sung Jin Kim


Book ID
114618234
Publisher
IEEE
Year
2006
Tongue
English
Weight
186 KB
Volume
53
Category
Article
ISSN
0018-9383

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Low temperature poly-Si TFTs for display
โœ In-Hyuk Song; Min-Koo Han ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 240 KB

We have fabricated new polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a single grain-boundary by a simple excimer laser annealing (ELA) method which employs a selectively floating amorphous silicon (a-Si) active layer and Al patterns. A thermally insulating air-gap between the f