DEPENDENCE OF THE OPTICAL AND ELECTRICAL PROPERTIES OF CHEMICALLY ANNEALED VACUUM-DEPOSITED a-Si:H FILMS ON THE DEPOSITION RATE
β Scribed by EL-NAGGAR, AHMED M.
- Book ID
- 119951893
- Publisher
- World Scientific Publishing Company
- Year
- 2012
- Tongue
- English
- Weight
- 262 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0217-9849
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π SIMILAR VOLUMES
The in uence of the thickness of the a-Si : H ΓΏlm on its optical properties was studied using spectrophotometric measurements of the ΓΏlm transmittance and re ectance in the wavelength range 200 -3000 nm. Both the refractive index and the absorption coe cient were found to increase as the ΓΏlm thickne
## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The