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Dependence of negative resistance characteristics of avalanching MIM diodes on current injection mechanisms

✍ Scribed by A.H.M. Shousha


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
290 KB
Volume
44
Category
Article
ISSN
0038-1098

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## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con