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Space charge dependence of negative resistance, avalanche layer width, and avalanche resonance frequency of SDR p+ nn+ Si IMPATT diodes with optimised doping profile

✍ Scribed by Ganguly, A. ;Banerjee, J. P. ;Roy, S. K.


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
303 KB
Volume
142
Category
Article
ISSN
0031-8965

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