Dependence of GaN photoluminescence on the excitation intensity
โ Scribed by V. N. Bessolov; V. V. Evstropov; M. E. Kompan; M. V. Mesh
- Book ID
- 110132589
- Publisher
- Springer
- Year
- 2002
- Tongue
- English
- Weight
- 57 KB
- Volume
- 36
- Category
- Article
- ISSN
- 1063-7826
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๐ SIMILAR VOLUMES
To clarify the subband profile of nitride quantum structures, we performed photoluminescence excitation spectrum measurements of GaN/Al 0.15 Ga 0.85 N multiquantum well structures grown by metalorganic vapor phase epitaxy on an on-axis 6H-SiC(0001) Si substrate. Clear absorption due to the ground st
## Abstract The photoluminescence of high purity nโtype CdTe single crystals (__n__ โ 2.9 ร 10^14^ cm^โ3^) at liquid helium temperature is studied at different excitation intensities. Emissions due to the recombination of free excitons and excitons bound to neutral donors, ionized donors, and neutr