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Dependence of catalytic properties of indium implanted SiO2 thin films on the film-substrate temperature during indium ion implantation

โœ Scribed by Yoshimura, S.; Ikuse, K.; Kiuchi, M.; Nishimoto, Y.; Yasuda, M.; Baba, A.; Hamaguchi, S.


Book ID
122984071
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
895 KB
Volume
315
Category
Article
ISSN
0168-583X

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Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30ยฐ, 400ยฐC). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400ยฐC