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Density of States Effective Mass of Holes in HgTe

✍ Scribed by I. Ivanov-Omskii; F. P. Kesamanly; B. T. Kolomiets; A. Sh. Mekhtiev; V. A. Skripkin


Publisher
John Wiley and Sons
Year
1968
Tongue
English
Weight
150 KB
Volume
27
Category
Article
ISSN
0370-1972

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A new method for the self-consistent calculation of the density-of-states mass of holes in 2-D silicon structures is presented. As an illustration, the two-dimensional dispersion relation E(k x , ky) for the band edges of the holes is calculated for a silicon p-channel inversion layer using the Kohn