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Degradation recovery in 1.3 μm GaInAsP-InP inverted-rib laser diodes

✍ Scribed by Yoon Soon Fatt


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
791 KB
Volume
26
Category
Article
ISSN
0167-9317

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LPE Growth of GaInAsP/InP Heterostructur
✍ Ing. Dr. Sc. J. Novotný; O. Procházková 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 488 KB

## LPE Growth of GaInAsP/InP Heterostructures for 1.3 pm Planar Buried Mesa Lasers LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/In