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Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

✍ Scribed by N. Trivellin; M. Meneghini; C. De Santi; S. Vaccari; G. Meneghesso; E. Zanoni; K. Orita; S. Takigawa; T. Tanaka; D. Ueda

Book ID
113800554
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
741 KB
Volume
51
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES

Degradation of InGaN-based laser diodes
Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate
✍ Trivellin, N. ;Meneghini, M. ;Zanoni, E. ;Meneghesso, G. ;Orita, K. ;Yuri, M. ;T πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 294 KB

## Abstract With this paper we analyze the correlation between the degradation of InGaN‐based laser diodes (LDs) and the increase in the non‐radiative recombination rate in the active region. Several 405 nm MOCVD LDs have been submitted to CW stress, for 2000 h (stress current in the range 40–100 m