Thermal oxidation of 6H-SiC was investigated by ion beam analysis techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations in dry O 2 enriched or not in the 18 O isotope and subsequent determinations of the 18 O profiles. After sequential 16 O 2 / 18 O
✦ LIBER ✦
Defects of the SiC/SiO2 interface: energetics of the elementary steps of the oxidation reaction
✍ Scribed by P. Deák; A. Gali; J. Knaup; Z. Hajnal; Th. Frauenheim; P. Ordejón; J.W. Choyke
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 209 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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