๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Defects in single-crystal silicon induced by hydrogenation

โœ Scribed by p Johnson, N.; Ponce, F.; Street, R.; Nemanich, R.


Book ID
121414954
Publisher
The American Physical Society
Year
1987
Tongue
English
Weight
314 KB
Volume
35
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Hydrogen plasma induced defects in silic
โœ Jeng, S. J.; Oehrlein, G. S.; Scilla, G. J. ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 797 KB
Point defect relaxation in silicon singl
โœ P. Gadaud; J. Woirgard ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 210 KB

Isothermal internal friction measurements reveal a relaxation peak in the temperature range 360-470 K for vibration frequencies between 10 -~ and 10 Hz. The temperature range and the fact that the relaxation parameters are not sensitive to the structural state of the specimens indicate a point defec