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Hydrogen plasma induced defects in silicon

✍ Scribed by Jeng, S. J.; Oehrlein, G. S.; Scilla, G. J.


Book ID
120087417
Publisher
American Institute of Physics
Year
1988
Tongue
English
Weight
797 KB
Volume
53
Category
Article
ISSN
0003-6951

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Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n-and p-doped Czochralski silicon samples were annealed at temperatures between 200 and 1000 Β°C for up to 10 h i