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Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane

✍ Scribed by Ratnikov, V. V.; Kyutt, R. N.; Smirnov, A. N.; Davydov, V. Yu.; Shcheglov, M. P.; Malin, T. V.; Zhuravlev, K. S.

Book ID: 121584116
Publisher: SP MAIK Nauka/Interperiodica
Year: 2013
Tongue: English
Weight: 214 KB
Volume: 58
Category: Article
ISSN: 1063-7745
DOI: 10.1134/S106377451307016X

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