✦ LIBER ✦

Origin of photoluminescence from Er3+centers in erbium doped GaAs and Al0.4Ga0.6As grown by MBE

✍ Scribed by Tong Zhang; Y. Hwang; J. Sun; N. V. Edwards; R. M. Kolbas; P. J. Caldwell

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Lattice location of Er in GaAs and Al0.5

✍ E. Alves; M.F. da Silva; K.R. Evans; C.R. Jones; A.A. Melo; J.C. Soares 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 302 KB

Improvement of photoluminescence and ele

✍ J.S. Yu; J.D. Song; J.M. Kim; S.J. Bae; Y.T. Lee; H. Lim 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 260 KB

Carbon doping characteristics of GaAs an

✍ Seong-Il Kim; Yong Kim; Moo-Sung Kim; Chun Keun Kim; Suk-Ki Min; Choochon Lee 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 599 KB