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Defect Structure Study with Planar Channeling in Pulse-Annealed Ion-Implanted Silicon

✍ Scribed by Dvurechenskii, A. V. ;Kashnikov, B. P. ;Pokhil, G. P. ;Popov, V. P. ;Tulinov, A. V. ;Turinge, A. A.

Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
208 KB
Volume
85
Category
Article
ISSN
0031-8965

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High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 β€’ 10 10 cm Γ€2 . The low dose ens