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Defect-related Auger excitation of erbium ions in amorphous silicon

โœ Scribed by Yassievich, I N; Bresler, M S; Gusev, O B


Book ID
125480788
Publisher
Institute of Physics
Year
1997
Tongue
English
Weight
154 KB
Volume
9
Category
Article
ISSN
0953-8984

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There are some evidences that Er related optically active centers in silicon form donors with binding energy about 150-250 meV, and the excitation of erbium occurs in a result of Auger recombination process of the electron bound to the donor and a free hole or bound exciton. It is supposed that ther