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Microscopic theory for excitation of erbium ions via silicon nanocrystals in silicon dioxide

โœ Scribed by I.N. Yassievich; A.S. Moskalenko; A.A. Prokofiev

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
195 KB
Volume
28
Category
Article
ISSN
0925-3467

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โœ A.A. Prokofiev; I.N. Yassievich; H. Vrielinck; T. Gregorkiewicz ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 174 KB

There are some evidences that Er related optically active centers in silicon form donors with binding energy about 150-250 meV, and the excitation of erbium occurs in a result of Auger recombination process of the electron bound to the donor and a free hole or bound exciton. It is supposed that ther