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Defect-related Auger excitation of erbium ions in amorphous silicon

โœ Scribed by Irina Yassievich; Mikhail Bresler; Oleg Gusev


Book ID
117149065
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
112 KB
Volume
226
Category
Article
ISSN
0022-3093

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There are some evidences that Er related optically active centers in silicon form donors with binding energy about 150-250 meV, and the excitation of erbium occurs in a result of Auger recombination process of the electron bound to the donor and a free hole or bound exciton. It is supposed that ther