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Defect Reduction in HVPE Growth of GaN and Related Optical Spectra

โœ Scribed by Paskova, T. ;Paskov, P.P. ;Darakchieva, V. ;Tungasmita, S. ;Birch, J. ;Monemar, B.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
162 KB
Volume
183
Category
Article
ISSN
0031-8965

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We present photoreflectance (PR) in combination with temperature and density dependent photoluminescence (PL) on undoped as well as on Mg-and C-doped GaN grown by molecular beam epitaxy (MBE). We determined the binding energy of the free A-exciton, the residual donorbound exciton and the Mg-acceptor