✦ LIBER ✦

Defect production in Si by ion bombardment under the influence of internal mechanical strain

✍ Scribed by Yu. Suprun-Belevich; L. Palmetshofer

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Behaviour of radiation defects under the

✍ Yu. Suprun-Belevich; L. Palmetshofer 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 477 KB

Capture of Ag atoms in defects produced

✍ F. Shoji; T. Kuroi; M. Watamori; K. Oura; T. Hanawa 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 410 KB

Influence of the defect concentration on

✍ R. Carius; F. Finger 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 215 KB

Strain relaxation mechanisms in Si1−xGex

✍ A. Rodríguez; T. Rodríguez; A. Kling; J. C. Soares; M. F. Da Silva; C. Ballester 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 317 KB

The influence of defects produced by ion

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB

Physiological Mechanisms and Adaptation

✍ Ahmad, Parvaiz; Wani, Mohd Rafiq 📂 Article 📅 2013 🏛 Springer New York ⚖ 395 KB