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Defect-induced optical transitions in CdTe and Cd0.96Zn0.04Te

✍ Scribed by Grill, R; Franc, J; Hl dek, P; Turkevych, I; Belas, E; H schl, P

Book ID
111885363
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
372 KB
Volume
17
Category
Article
ISSN
0268-1242

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Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations sho