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Defect Control in High Purity Metals for <0.25 μm Interconnect Applications

✍ Scribed by Gilman, P. S.

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
458 KB
Volume
167
Category
Article
ISSN
0031-8965

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✦ Synopsis

Metal purity for interconnect applications deposited by physical vapor deposition has steadily improved ot the point where 5N5 purity for aluminum alloys is routinely exceeded, while for titanium metal purity is at 5N and progressing to 6N. However, recent industrial experience indicates that metal purity is only one requirement necessary for defect control for `0X25 mm metal width applications, especially regarding particles or contamination that originate from sputtering targets. For example, aluminum alloys of identical purity can have vastly different droplet performance; where the droplets are localized, target-surface melting may originate from micro-arcing caused by aluminum oxide or carbon inclusions. These b 5 mm diameter droplets lead to shorts that drastically reduce device yield. Also, nodule formation on the surfaces of titanium metal targets appears to be independent of metal purity. Fragmentation of the deposited nodules is one source of titanium particles. Aluminum-droplet formation and titanium-nodule formation will be discussed, as well as recent efforts to reduce the defect contributions of these metals.

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