Low-loss and high-isolation active type cascode switch in 0.13-μm CMOS for millimeter-wave applications
✍ Scribed by Dong Ho Lee
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 202 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
This article presents two types of switches which are fabricated in 0.13‐μm standard CMOS process characterized up to 50 GHz. The first is the conventional series NMOS switch with an optimum gate width which is adjusted by measuring various sized devices. The second is a new active type cascode switch for millimeter‐wave phased array systems. The series NMOS switch produces 3 dB insertion loss and 7.5 dB isolation at 40 GHz. In contrast, the active type cascode switch has 7.5 dB better insertion loss (Gain) and 20 dB better isolation than the passive switch at 40 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1856–1858, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24476