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Defect characterization in boron implanted silicon after flash annealing

โœ Scribed by Lei Zhu; Jason Chan; Steve McCoy; Jeff Gelpey; Baonian Guo; Kyuha Shim; N. David Theodore; Michael Martin; Jesse Carter; Mark Hollander; Lin Shao

Book ID
108224230
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
392 KB
Volume
266
Category
Article
ISSN
0168-583X

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Defect production and annealing in ion i
Defect production and annealing in ion implanted silicon carbide
โœ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron