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Defect analysis of epitaxial Ag films on silicon by MeV ion channeling

โœ Scribed by G.A. Smith; K.-H. Park; G.-C. Wang; T.-M. Lu; W.M. Gibson


Book ID
118363352
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
725 KB
Volume
233
Category
Article
ISSN
0039-6028

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โœ Dr. R. Flagmeyer; Dr. B. Schumann ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 539 KB

Lattice matched (Ca, Sr)F, and related fluoride films grown on (100)GaAs substrates were investigated by Rutherford backscattering/Channeling. This technique allows the characterization of the 30-250 nm thick heteroepitaxial layers with respect to chemical composition, film thickness, interface roug