Deep-UV Photochemistry and Patterning of (Aminoethylaminomethyl)phenethylsiloxane Self-Assembled Monolayers

✍ Scribed by M.-S. Chen; C. S. Dulcey; L. A. Chrisey; W. J. Dressick

• Book ID: 101416773
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 277 KB
• Volume: 16
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/adfm.200500744

✦ Synopsis

The 193 nm photochemistry of (aminoethylaminomethyl)phenethylsiloxane (PEDA) self-assembled monolayers (SAMs) under ambient conditions is described. The primary photodegradation pathways at low exposure doses (< 100 mJ cm -2 ) are benzylic C-N bond cleavage (ca. 68 %), with oxidation of the benzyl C to the aldehyde, and Si-C bond cleavage (ca. 32 %). Amine-containing photoproducts released from the SAM during exposure remain physisorbed on the surface, where they undergo secondary photolysis leading to their complete degradation and removal after ca. 1200 mJ cm -2 . NaCl(aq) post-exposure rinsing removes the physisorbed materials, showing that degradation of the original PEDA species (leaving Si-OH) is substantially complete after ca. 450 mJ cm -2 . Consequently, patterned, rinsed PEDA SAMs function as efficient templates for fabrication of high-resolution, negative-tone, electroless metal and DNA features with good selectivity at low dose (i.e., ca. 400 mJ cm -2 ) via materials grafting to the intact amines remaining in the unirradiated PEDA SAM regions.