Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
β Scribed by Polyakov, A. Y.; Jang, Lee-Woon; Jo, Dong-Seob; Lee, In-Hwan; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Hyeon Baik, Kwang; Hwang, Sung-Min
- Book ID
- 121739323
- Publisher
- American Institute of Physics
- Year
- 2012
- Tongue
- English
- Weight
- 448 KB
- Volume
- 111
- Category
- Article
- ISSN
- 0021-8979
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The growth techniques which have enabled the realization of InGaNβbased multiβquantumβwell (MQW) structures with high internal quantum efficiencies (IQE) on 150βmm (6βin.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on largeβarea (111) silicon substr
An InGaN/GaN multiple quantum well structure grown by low pressure MOCVD on c-Al 2 O 3 substrate is investigated using spectral-time-resolved cathodoluminescence microscopy (CL). At 6 K the laterally integrated CL spectrum shows a very efficient blue emission from the InGaN multiple quantum well cen