Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot
Deep Levels in ZnSiP2 Determined by Schottky TSC Measurements
✍ Scribed by Kühnel, G. ;Siegel, W. ;Ziegler, E.
- Publisher
- John Wiley and Sons
- Year
- 1979
- Tongue
- English
- Weight
- 406 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0031-8965
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