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Deep levels in Au-POxNyHz-(n)InP MIS structures

✍ Scribed by Quan Dang Tran


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
585 KB
Volume
39
Category
Article
ISSN
0038-1101

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Deep Level Transient Spectroscopy (DLTS) studies have been carried out on Au/SiO 2 /InP Me-talΒ±OxideΒ±Semiconductor (MOS) diodes. Majority and minority carrier traps have been observed for the room temperature SiO 2 deposited samples. The effect of substrate temperature during SiO 2 deposition has be