Thermal annealing behavior of deep level
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Nazir A. Naz; Umar S. Qurashi; M. Zafar Iqbal
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Article
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2009
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Elsevier Science
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English
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We report the results of isochronal annealing study of deep levels in Rh-doped n-type GaAs grown by metal-organic vapor phase epitaxy (MOVPE). Deep level transient spectroscopy (DLTS) technique has been employed to study the effects of annealing on deep levels in Rh-doped p + nn + junction samples.