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Deep levels and minority carrier lifetime in MOVPE p-type GaAs

โœ Scribed by P.J. Wang; T.F. Kuech; M.A. Tischler; P.M. Mooney; G.J. Scilla; F. Cardone


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
631 KB
Volume
93
Category
Article
ISSN
0022-0248

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Thermal annealing behavior of deep level
โœ Nazir A. Naz; Umar S. Qurashi; M. Zafar Iqbal ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 242 KB

We report the results of isochronal annealing study of deep levels in Rh-doped n-type GaAs grown by metal-organic vapor phase epitaxy (MOVPE). Deep level transient spectroscopy (DLTS) technique has been employed to study the effects of annealing on deep levels in Rh-doped p + nn + junction samples.