✦ LIBER ✦

Deep level transient spectroscopy study of electron-irradiated CuInSe2thin films

✍ Scribed by Hiroshi Okada; Naoki Fujita; Hae-Seok Lee; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh

Book ID: 107453093
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 113 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0234-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deep-level transient spectroscopy of AlG

Deep-level transient spectroscopy of AlGaAs and CuInSe2

✍ Thomas R. Hanak; Assem M. Bakry; Donald j. Dunlavy; Fouad Abou-Elfotouh; Richard 📂 Article 📅 1989 🏛 Elsevier Science ⚖ 428 KB

A new technique is used to obtain the activation energies and capture cross-sections of closely spaced traps. It is applied to single~rystal p-type CuInSe2 prepared by the vertical Bridgeman method and selenium~loped AlxGal-xAs (x = 0.27) grown by metal-organic chemical vapor deposition. Deep center

Study of deep levels in CuInSe2 by deep

Study of deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells

✍ N. Christoforou; J.D. Leslie; S. Damaskinos 📂 Article 📅 1989 🏛 Elsevier Science ⚖ 906 KB

This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce

Study of deep levels in Schottky/CuInSe2

Study of deep levels in Schottky/CuInSe2single-crystal devices by deep-level transient spectroscopy measurements

✍ A. M. Bakry; A. M. Elnaggar 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 152 KB

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot

Deep-level transient spectroscopy studie

Deep-level transient spectroscopy studies of U-irradiated silicon

✍ P. Mary; P. Bogdanski; M. Toulemonde; R. Spohr; J. Vetter 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 240 KB

Deep level transient spectroscopy of neu

Deep level transient spectroscopy of neutron irradiated semiconductors

✍ J.W. Farmer; J.M. Meese 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 771 KB

Electron irradiation of ion-implanted n-

Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

✍ S. Kaschieva; K.G. Stefanov; D. Karpuzov 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 81 KB