Deep-level transient spectroscopy characterization of metallic contamination during plasma resist stripping

✍ Scribed by O. Joubert; D. Mathiot; J. Pelletier

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 376 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90288-2

✦ Synopsis

It is shown that plasma stripping of a photosensitive resist induces metallic contamination of the underlying substrate. It is" possible to discriminate between the contamination induced by the reactor environment attd the contamination due to the resist itself In particular it is" demonstrated that residual chromium and iron atoms present in the resist are introduced into the silicon substrate. The possible mechanisms of introduction are discussed in correlation with two important plasma-surface interaction parameters, i.e. ion bombardment energy attd substrate temperature.