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Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane

✍ Scribed by Kato, Masashi; Ichimura, Masaya; Arai, Eisuke; Masuda, Yasuichi; Chen, Yi; Nishino, Shigehiro; Tokuda, Yutaka

Book ID
126654695
Publisher
Institute of Pure and Applied Physics
Year
2001
Tongue
English
Weight
198 KB
Volume
40
Category
Article
ISSN
0021-4922

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A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-