Deep level impurities in germanium
β Scribed by W.W. Tyler
- Publisher
- Elsevier Science
- Year
- 1959
- Tongue
- English
- Weight
- 689 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0022-3697
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π SIMILAR VOLUMES
The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional
The galvanomagnetic properties (T= 4.2-300 K, B r 0.08 T) of Pb 1 Γ x Γ y Sn x V y Te alloys (x= 0.06-0.26, y= 0.002-0.066) have been investigated. Low temperature activation range of the impurity conductivity on the temperature dependencies of resistivity r and of the Hall coefficient R H in the he