✍ Scribed by E.P. Skipetrov; A.N. Golovanov; E.A. Zvereva; E.I. Slyn’ko; V.E. Slyn’ko
No coin nor oath required. For personal study only.
The galvanomagnetic properties (T= 4.2-300 K, B r 0.08 T) of Pb 1 À x À y Sn x V y Te alloys (x= 0.06-0.26, y= 0.002-0.066) have been investigated. Low temperature activation range of the impurity conductivity on the temperature dependencies of resistivity r and of the Hall coefficient R H in the heavily doped samples has been revealed and attributed to the appearance of vanadium-induced deep level in the gap of the alloys. It was found that in insulating phase alloys possess a high photosensitivity to IR excitation at temperatures up to T c E 40 K. In the alloy with xE 0.2 the metal-insulator transition due to the shift of the Fermi level from the valence band to the gap with the increase of the vanadium and tin content and the pinning of the Fermi level by vanadium level were observed. The diagram of electronic structure reconstruction for Pb 1 À x À y Sn x V y Te alloys was proposed.
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