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Deep-Hole Traps in p-Type GaAs$_{1-x}$Bi$_{x}$ Grown by Molecular Beam Epitaxy

✍ Scribed by Fuyuki, Takuma; Kashiyama, Shota; Tominaga, Yoriko; Oe, Kunishige; Yoshimoto, Masahiro

Book ID
120039645
Publisher
Institute of Pure and Applied Physics
Year
2011
Tongue
English
Weight
268 KB
Volume
50
Category
Article
ISSN
0021-4922

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Deep hole traps in Be-doped Al0.2Ga0.8As
Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy
✍ J. Szatkowski; K. SieraΕ„ski; A. Hajdusianek; E. PΕ‚aczek-Popko πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 195 KB

Deep hole traps in Be doped p-type Al 0.2 Ga 0.8 As grown by molecular beam epitaxy have been studied by the deeplevel transient-spectroscopy method applied to samples with a Schottky diode configuration. Six hole traps, labeled as H1-H6, were found. Activation energies and capture cross sections ha