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Deeop Level Transient Spectroscopy in P-Doped InSe Single Crystals

โœ Scribed by Micocci, G. ;Tepore, A. ;Rella, R. ;Siciliano, P.


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
173 KB
Volume
128
Category
Article
ISSN
0031-8965

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Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot