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Decomposition of allylselenium sources in the metalorganic chemical vapor deposition of zinc selenide

โœ Scribed by Patnaik, Sanjay; Ho, Kwok Lun; Jensen, Klavs F.; Gordon, Douglas C.; Kirss, Rein U.; Brown, Duncan W.


Book ID
126856866
Publisher
American Chemical Society
Year
1993
Tongue
English
Weight
990 KB
Volume
5
Category
Article
ISSN
0897-4756

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ChemInform Abstract: Metalorganic Chemic
โœ S. L. STOLL; A. R. BARRON ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 33 KB ๐Ÿ‘ 2 views

InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball