In Situ Monitoring of GaN Growth in Mult
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LΓΌnenbΓΌrger, M. ;Protzmann, H. ;Heuken, M. ;JΓΌrgensen, H.
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Article
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1999
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John Wiley and Sons
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English
β 191 KB
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Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor 1 MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition o