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Decomposition and Uniformity of Material Gases in GaN MOVPE

✍ Scribed by Hirako, A. ;Ohkawa, K.


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
296 KB
Volume
194
Category
Article
ISSN
0031-8965

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Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor 1 MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition o