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DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiN x

โœ Scribed by Shiu, J Y; Desmaris, V; Rorsman, N; Kumakura, K; Makimoto, T; Zirath, H; Chang, E Y


Book ID
121510821
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
121 KB
Volume
22
Category
Article
ISSN
0268-1242

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A physics-based model of DC and microwav
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A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the h