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Damage in silicon carbide induced by Rutherford backscattering analysis

✍ Scribed by W Fukarek; R.A Yankov; W Anwand; V Heera

Book ID
114170359
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
237 KB
Volume
142
Category
Article
ISSN
0168-583X

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Channeling Rutherford backscattering spectrometry (RBS) is an essential analysis technique in materials science. However, the accuracy of RBS can be significantly affected by disorders in materials induced by the analyzing ion beam even under channeling mode. We have studied RBS analysis-induced rad